Discrete Semiconductor Products

MCB60I1200TZ

Obsolete

1200V 90A SIC POWER MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

1200V 90A SIC POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	MCB60I1200TZ

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	2790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
Rds On (Max) @ Id, Vgs [Max]	34 mOhm
Supplier Device Package	TO-268AA (D3Pak-HV)
Vgs (Max) [Max]	20 V, -5 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Mounting Type
LITTELFUSE MCB60I1200TZ	-5 V 20 V	4 V	160 nC	1.2 kV	90 A	175 °C	-40 °C	N-Channel	2790 pF	TO-268AA (D3Pak-HV)	34 mOhm	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 76.72	1m+

General part information

N-Channel 1200 V 90A (Tc) Surface Mount TO-268AA (D3Pak-HV)

Technical documentation and resources

No documents available