Discrete Semiconductor Products

SIB404DK-T1-GE3

Obsolete

MOSFET N-CH 12V 9A PPAK SC75-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 12V 9A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB404DK-T1-GE3

Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-75-6
Package Name	PowerPAK® SC-75-6
Power Dissipation (Max)	2.5 W, 13 W
Rds On (Max)	19 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	800 mV

Part	Power Dissipation (Max)	Vgs(th) (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) (Tc)	FET Type	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Rds On (Max)	Package Name
Vishay Dale SIB404DK-T1-GE3	2.5 W 13 W	800 mV	Surface Mount	4.5 V	PowerPAK® SC-75-6	9 A	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	5 V	12 V	15 nC	19 mOhm	PowerPAK® SC-75-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 12 V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources