Discrete Semiconductor Products

IDY10S120XKSA1

Obsolete

DIODE SIC 1.2KV 5A TO247HC-3

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Discrete Semiconductor Products

Obsolete

DIODE SIC 1.2KV 5A TO247HC-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDY10S120XKSA1

Capacitance @ Vr, F	250 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	120 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3 Variant
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO247HC-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Speed	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Technology
INFINEON IDY10S120XKSA1	1.8 V	5 A	500 mA	120 µA	250 pF	Through Hole	1.2 kV	0 ns	175 ░C	-55 °C	TO-247-3 Variant	PG-TO247HC-3	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 10.38

General part information

Diode 1200 V 5A Through Hole PG-TO247HC-3

Technical documentation and resources