Discrete Semiconductor Products

IHY20N120R3XKSA1

Obsolete

IGBT 1200V 40A 310W TO247HC-3

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Discrete Semiconductor Products

Obsolete

IGBT 1200V 40A 310W TO247HC-3

Technical Specifications

Parameters and characteristics for this part

Specification	IHY20N120R3XKSA1

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	211 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3 Variant
Power - Max [Max]	310 W
Supplier Device Package	PG-TO247HC-3
Switching Energy	950 µJ
Td (on/off) @ 25°C	387 ns
Td (on/off) @ 25°C	-
Test Condition	20 A, 15 V, 600 V, 15 Ohm
Vce(on) (Max) @ Vge, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Test Condition	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Switching Energy	Gate Charge	Mounting Type	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C
INFINEON IHY20N135R3XKSA1	175 °C	-40 °C	40 A	15 V 15 Ohm 20 A 600 V	60 A	335 ns	-	TO-247-3 Variant	1350 V	Trench	1.3 mJ	195 nC	Through Hole	PG-TO247HC-3	1.8 V	310 W
INFINEON IHY20N120R3XKSA1	175 °C	-40 °C	40 A	15 V 15 Ohm 20 A 600 V	60 A			TO-247-3 Variant	1200 V	Trench	950 µJ	211 nC	Through Hole	PG-TO247HC-3	1.7 V	310 W	387 ns	-

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.25

General part information

IGBT Trench 1200 V 40 A 310 W Through Hole PG-TO247HC-3

Technical documentation and resources