Specification	IPB320N20N3GATMA1

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	32 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPB320 Series

Part	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPB320N20N3GATMA1	20 V	Surface Mount	200 V	136 W	175 °C	-55 °C	32 mOhm	34 A	N-Channel	10 V	2350 pF	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	29 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 3.35
		10	$ 2.31
		50	$ 2.28
		100	$ 1.81
		500	$ 1.80
Digikey	Cut Tape (CT)	1	$ 4.46
		10	$ 2.95
		100	$ 2.09
		500	$ 1.72
	Digi-Reel®	1	$ 4.46
		10	$ 2.95
		100	$ 2.09
		500	$ 1.72
	N/A	6879	$ 3.73
	Tape & Reel (TR)	1000	$ 1.62
Newark	Each	1	$ 3.69
		10	$ 2.46
		100	$ 1.73
		500	$ 1.41
		1000	$ 1.30
		3000	$ 1.28

Description

General part information

IPB320 Series

The IPB320N20N3 G is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.

Documents

Technical documentation and resources

Simulation Model EN

Datasheet

Technical Data Sheet EN

Datasheet