Discrete Semiconductor Products

IPI020N06NAKSA1

Obsolete

MOSFET N-CH 60V 29A/120A TO262

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 29A/120A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	IPI020N06NAKSA1

Current - Continuous Drain (Id) @ 25°C	29 A, 120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	106 nC
Input Capacitance (Ciss) (Max) @ Vds	7800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	214 W, 3 W
Rds On (Max) @ Id, Vgs	0.002 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.8 V

Part	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Technology	Power Dissipation (Max)
INFINEON IPI020N06NAKSA1	2.8 V	6 V 10 V	7800 pF	29 A 120 A	175 °C	-55 °C	N-Channel	0.002 mOhm	20 V	106 nC	60 V	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	MOSFET (Metal Oxide)	3 W 214 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources