Discrete Semiconductor Products

IRF7204TRPBF

Obsolete

IR MOSFET™ P-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 60 MOHM;

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IR MOSFET™ P-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 60 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7204TRPBF

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case	Package / Case	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)
INFINEON IRF7204TRPBF	P-Channel	5.3 A	20 V	4.5 V 10 V	Surface Mount	25 nC	860 pF	150 °C	-55 °C	60 mOhm	0.154 in	8-SOIC	3.9 mm	8-SO	MOSFET (Metal Oxide)	2.5 V	12 V	2.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00