Specification	2SA1162-GR,LXHF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Qualification	AEC-Q101
Supplier Device Package	S-Mini
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

2SA1162 Series

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Qualification
Toshiba Semiconductor and Storage 2SA1162-GR,LF	Surface Mount	50 V	150 mW	150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	S-Mini	200 hFE	PNP	125 ¯C
Toshiba Semiconductor and Storage 2SA1162-O,LF	Surface Mount	50 V	150 mW	150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	S-Mini	200 hFE	PNP	125 ¯C
Toshiba Semiconductor and Storage 2SA1162S-Y, LF(D	Surface Mount	50 V	150 mW	150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	S-Mini		PNP	125 ¯C	120
Toshiba Semiconductor and Storage 2SA1162-Y,LF	Surface Mount	50 V	150 mW	150 mA	100 µA	SC-59 SOT-23-3 TO-236-3	S-Mini		PNP	125 ¯C	120
Toshiba Semiconductor and Storage 2SA1162-Y,LXHF	Surface Mount	50 V	200 mW	150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	S-Mini		PNP	125 ¯C	120	Automotive	AEC-Q101
Toshiba Semiconductor and Storage 2SA1162-O,LXHF	Surface Mount	50 V	200 mW	150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	S-Mini		PNP	125 ¯C	70	Automotive	AEC-Q101
Toshiba Semiconductor and Storage 2SA1162S-Y,LF	Surface Mount	50 V	150 mW	150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	S-Mini		PNP	125 ¯C	70
Toshiba Semiconductor and Storage 2SA1162-GR,LXHF	Surface Mount	50 V	200 mW	150 mA	100 nA	SC-59 SOT-23-3 TO-236-3	S-Mini	200 hFE	PNP	125 ¯C		Automotive	AEC-Q101