Discrete Semiconductor Products

2N3501 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 150VCBO 150VCEO 6.0VEBO 300MA 1.0W

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT NPN 150VCBO 150VCEO 6.0VEBO 300MA 1.0W

Technical Specifications

Parameters and characteristics for this part

Specification	2N3501 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	1 W
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	150 V

Part	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Supplier Device Package
Central Semiconductor Corp 2N3501 TIN/LEAD	Through Hole	TO-205AD TO-39-3 Metal Can	300 mA	50 nA	400 mV	NPN	200 °C	-65 °C	100 hFE	1 W	150 V	150 MHz	TO-39

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 5.08
Mouser	N/A	500	$ 5.19
		1000	$ 4.77

General part information

BIPOLAR TRANSISTORS - BJT NPN 150VCBO 150VCEO 6.0VEBO 300MA 1.0W

Technical documentation and resources