Discrete Semiconductor Products

MPS6522 APP PBFREE

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BIPOLAR TRANSISTORS - BJT PNP 25VCBO 25VCEO 4.0VEBO 50MA 3.5PF

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT PNP 25VCBO 25VCEO 4.0VEBO 50MA 3.5PF

Technical Specifications

Parameters and characteristics for this part

Specification	MPS6522 APP PBFREE

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	350 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]
Central Semiconductor Corp MPS6522 APP PBFREE	PNP	100	Through Hole	150 °C	-65 °C	100 mA	500 mV	TO-92	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	350 MHz	25 V	50 nA	625 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.16
Mouser	N/A	6000	$ 0.16
		10000	$ 0.15

General part information

BIPOLAR TRANSISTORS - BJT PNP 25VCBO 25VCEO 4.0VEBO 50MA 3.5PF

Technical documentation and resources