ISC026N03L5SATMA1
ObsoleteOPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM;
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ISC026N03L5SATMA1
ObsoleteOPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | ISC026N03L5SATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 48 W, 2.5 W |
| Rds On (Max) @ Id, Vgs | 2.6 mOhm |
| Supplier Device Package | PG-TDSON-8-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
N-Channel Series
With the combined portfolio of Infineon's OptiMOS™ and StrongIRFET power MOSFET families, Infineon offers the right choice for all different customers and their requirements. Especially for customers who are looking for asimple and price competitive solution, but still want to enjoy a stable supply at the well-established Infineon quality, we offer the right products. The products can address a broad range of applications such as SMPS (adapterandcharger),battery powered applications,motor control and drives,battery management systems, inverters,computingandmobile applications. The actual portfolio focus on 30V n-channel MOSFETs and products for smaller power handling (n- & p-channel) in a wide range of packages.
Documents
Technical documentation and resources