AIMDQ75R027M1HXUMA1
ActiveTHE COOLSIC™ MOSFET 750 V IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST SYSTEM PERFORMANCE AND RELIABILITY.
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AIMDQ75R027M1HXUMA1
ActiveTHE COOLSIC™ MOSFET 750 V IS A HIGHLY ROBUST SIC MOSFET FOR THE BEST SYSTEM PERFORMANCE AND RELIABILITY.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | AIMDQ75R027M1HXUMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 64 A |
| Drain to Source Voltage (Vdss) | 750 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V, 20 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1668 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Power Dissipation (Max) | 273 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | PG-HDSOP-22 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) [Max] | 23 V |
| Vgs (Max) [Min] | -5 V |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
750V G1 Series
The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
Documents
Technical documentation and resources