Discrete Semiconductor Products

FF150R12ME3GBOSA1

NRND

THE FF150R12ME3G IS A DUAL IGBT3 - E3 MODULE IN A ECONODUAL™ 3 HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 150 A.

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Discrete Semiconductor Products

NRND

THE FF150R12ME3G IS A DUAL IGBT3 - E3 MODULE IN A ECONODUAL™ 3 HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 150 A.

Technical Specifications

Parameters and characteristics for this part

Specification	FF150R12ME3GBOSA1

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	200 A
Current - Collector Cutoff (Max) [Max]	5 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	10.5 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	695 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	IGBT Type	Power - Max [Max]	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	NTC Thermistor	Vce(on) (Max) @ Vge, Ic	Input	Configuration	Input Capacitance (Cies) @ Vce	Supplier Device Package
INFINEON FF150R12ME3GBOSA1	1200 V	5 mA	Trench Field Stop	695 W	Chassis Mount	Module	125 °C	-40 C	200 A		2.15 V	Standard	Half Bridge	10.5 nF	Module
INFINEON FF150R12MS4GBOSA1	1200 V	5 mA		1250 W	Chassis Mount	Module	125 °C	-40 C	225 A		3.7 V	Standard	2 Independent	11 nF	Module

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	10	$ 122.71

General part information

EconoDUAL™ 31200 V, 150 A dualIGBT modulewith TRENCHSTOP™ IGBT3 and emitter controlled high efficiency diode.

Technical documentation and resources