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PG-TO247-3
Discrete Semiconductor Products

IPW60R045CPFKSA1

NRND
INFINEON

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 45 MOHM;

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PG-TO247-3
Discrete Semiconductor Products

IPW60R045CPFKSA1

NRND
INFINEON

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 45 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R045CPFKSA1
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]190 nC
Input Capacitance (Ciss) (Max) @ Vds6800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)431 W
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 796$ 14.92
Tube 1$ 18.46
10$ 13.18
100$ 10.51
NewarkEach 1$ 15.79
10$ 14.53
25$ 10.34
50$ 9.79
100$ 9.24
480$ 9.22

Description

General part information

IPW60R045 Series

The IPW60R045CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

Documents

Technical documentation and resources