Specification	S29GL01GS11DHIV13

Access Time	110 ns
Memory Format	FLASH
Memory Interface	Parallel
Memory Organization	64M x 16
Memory Size	1 Mbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	64-LBGA
Supplier Device Package	64-FBGA (9x9)
Technology	FLASH - NOR
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	1.65 V
Write Cycle Time - Word, Page [custom]	60 ns
Write Cycle Time - Word, Page [custom]	60 ns

S29GL01G/512/256/128S Series

Part	Memory Size	Memory Type	Memory Organization	Memory Format	Supplier Device Package	Technology	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Mounting Type	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Package / Case	Grade	Qualification
INFINEON S29GL01GS11TFI020	1 Mbit	Non-Volatile	64M x 16	FLASH	56-TSOP	FLASH - NOR	60 ns	60 ns	Surface Mount	Parallel	3.6 V	2.7 V	85 C	-40 ¯C	110 ns
INFINEON S29GL01GS10DHA023	1 Mbit	Non-Volatile	64M x 16	FLASH	64-FBGA (9x9)	FLASH - NOR	60 ns	60 ns	Surface Mount	Parallel	3.6 V	2.7 V	85 C	-40 ¯C	100 ns	64-LBGA
INFINEON S29GL01GS11DHIV13	1 Mbit	Non-Volatile	64M x 16	FLASH	64-FBGA (9x9)	FLASH - NOR	60 ns	60 ns	Surface Mount	Parallel	3.6 V	1.65 V	85 C	-40 ¯C	110 ns	64-LBGA
INFINEON S29GL01GS10TFA023	1 Mbit	Non-Volatile	64M x 16	FLASH	56-TSOP	FLASH - NOR	60 ns	60 ns	Surface Mount	Parallel	3.6 V	2.7 V	85 C	-40 ¯C	100 ns		Automotive	AEC-Q100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1361	$ 13.01
Mouser	N/A	1	$ 9.54
		10	$ 9.28
		250	$ 9.25
		500	$ 9.14
		1000	$ 8.93
		2200	$ 8.70
Newark	Each (Supplied on Cut Tape)	1	$ 20.41
		10	$ 18.74
		25	$ 18.13
		50	$ 17.69
		100	$ 17.26
		250	$ 16.72
		500	$ 16.32
		1000	$ 15.94

Description

General part information

S29GL01G/512/256/128S Series

S29GL01GS11DHIV13 is a MIRRORBIT™ Eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time of as fast as 15ns with a corresponding random access time of as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

S29GL01GS11DHIV13 | Datasheet

Datasheet