Discrete Semiconductor Products

IPP260N06N3GXKSA1

Obsolete

MOSFET N-CH 60V 27A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 27A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP260N06N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPP260N06N3GXKSA1	60 V	MOSFET (Metal Oxide)	26 mOhm	4 V	10 V	Through Hole	TO-220-3	175 °C	-55 °C	20 V	27 A	15 nC	36 W	PG-TO220-3	N-Channel	1200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 27A (Tc) 36W (Tc) Through Hole PG-TO220-3

Technical documentation and resources