Discrete Semiconductor Products

SICU0460B-TP

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DIODE SIL CARBIDE 650V 4A DPAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 650V 4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SICU0460B-TP

Capacitance @ Vr, F	200 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	4 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Capacitance @ Vr, F	Current - Average Rectified (Io)
MCC (Micro Commercial Components) SICU0460B-TP	15 µA	175 ░C	-55 °C	650 V	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	SiC (Silicon Carbide) Schottky	1.8 V	4 A	Surface Mount	500 mA	200 pF	4 A
MCC (Micro Commercial Components) SICU0460B-TP	15 µA	175 ░C	-55 °C	650 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	SiC (Silicon Carbide) Schottky	1.8 V	4 A	Surface Mount	500 mA	200 pF	4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 4A Surface Mount DPAK

Technical documentation and resources