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8 SOIC
Integrated Circuits (ICs)

AD648KRZ

Active
Analog Devices Inc./Maxim Integrated

DUAL PRECISION, LOW POWER BIFET OP AMP

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8 SOIC
Integrated Circuits (ICs)

AD648KRZ

Active
Analog Devices Inc./Maxim Integrated

DUAL PRECISION, LOW POWER BIFET OP AMP

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Technical Specifications

Parameters and characteristics for this part

SpecificationAD648KRZ
-3db Bandwidth1 MHz
Amplifier TypeJ-FET
Current - Input Bias3 pA
Current - Output / Channel15 mA
Current - Supply340 µA
Gain Bandwidth Product1 MHz
Mounting TypeSurface Mount
Number of Circuits2
Operating Temperature (Max)70 °C
Operating Temperature (Min)0 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
Slew Rate1.8 V/µs
Voltage - Input Offset300 µV
Voltage - Supply Span (Max)36 V
Voltage - Supply Span (Min)9 V

AD648 Series

Dual Precision, Low Power BiFET Op Amp

PartVoltage - Supply Span (Max)Operating Temperature (Max)Operating Temperature (Min)Package LengthPackage NamePackage WidthCurrent - SupplyCurrent - Input BiasVoltage - Supply Span (Min)Gain Bandwidth ProductNumber of CircuitsMounting TypeAmplifier TypeCurrent - Output / ChannelVoltage - Input OffsetSlew Rate-3db Bandwidth
505~N-8~N~8
Analog Devices Inc./Maxim Integrated
36 V
70 °C
0 °C
0.3 in
8-DIP
8-PDIP
7.62 mm
340 µA
3 pA
9 V
1 MHz
2
Through Hole
J-FET
15 mA
300 µV
1.8 V/µs
1 MHz
8 SOIC
Analog Devices Inc./Maxim Integrated
36 V
70 °C
0 °C
0.154 in
8-SOIC
3.9 mm
340 µA
3 pA
9 V
1 MHz
2
Surface Mount
J-FET
15 mA
300 µV
1.8 V/µs
1 MHz
8 SOIC
Analog Devices Inc./Maxim Integrated
36 V
70 °C
0 °C
0.154 in
8-SOIC
3.9 mm
340 µA
3 pA
9 V
1 MHz
2
Surface Mount
J-FET
15 mA
300 µV
1.8 V/µs
1 MHz
8 SOIC
Analog Devices Inc./Maxim Integrated
36 V
70 °C
0 °C
0.154 in
8-SOIC
3.9 mm
340 µA
3 pA
9 V
1 MHz
2
Surface Mount
J-FET
15 mA
300 µV
1.8 V/µs
1 MHz
LITTELFUSE IXDN602PI
Analog Devices Inc./Maxim Integrated
36 V
70 °C
0 °C
0.3 in
8-DIP
8-PDIP
7.62 mm
340 µA
5 pA
9 V
1 MHz
2
Through Hole
J-FET
15 mA
750 µV
1.8 V/µs
1 MHz
8 SOIC
Analog Devices Inc./Maxim Integrated
36 V
70 °C
0 °C
0.154 in
8-SOIC
3.9 mm
340 µA
3 pA
9 V
1 MHz
2
Surface Mount
J-FET
15 mA
300 µV
1.8 V/µs
1 MHz
8 SOIC
Analog Devices Inc./Maxim Integrated
36 V
70 °C
0 °C
0.154 in
8-SOIC
3.9 mm
340 µA
5 pA
9 V
1 MHz
2
Surface Mount
J-FET
15 mA
750 µV
1.8 V/µs
1 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 19.291m+
10$ 13.99
25$ 12.63
100$ 11.11
250$ 10.37
500$ 10.00

CAD

3D models and CAD resources for this part

Description

General part information

AD648 Series

The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias current is guaranteed over the AD648's entire common-mode voltage range.The economical J grade has a maximum guaranteed offset voltage of less than 2 mV and an offset voltage drift of less than 20 µV/°C. The combination of low quiescent current and low offset voltage drift minimizes changes in input offset voltage due to self-heating effects.The AD648 is recommended for any dual supply op amp application requiring low power and excellent dc and ac performance. In applications such as battery-powered, precision instrument front ends and CMOS DAC buffers, the AD648's excellent combination of low input offset voltage and drift, low bias current and low 1/f noise reduces output errors. High common-mode rejection and high open-loop gain ensures better than 12-bit linearity in high impedance, buffer applications.The AD648 is pinned out in a standard dual op amp configuration and is available in seven performance grades. The AD648J and AD648K are rated over the commercial temperature range of 0°C to +70°C.The AD648 is available in an 8-pin plastic mini-DIP and SOIC package.