Discrete Semiconductor Products

IPP120P04P404AKSA1

Obsolete

MOSFET P-CH 40V 120A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 40V 120A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP120P04P404AKSA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	205 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	14790 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Grade	Package / Case	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type
INFINEON IPP120P04P404AKSA1	MOSFET (Metal Oxide)	Automotive	TO-220-3	PG-TO220-3-1	Through Hole	4 V	3.8 mOhm	14790 pF	120 A	136 W	20 V	205 nC	10 V	AEC-Q101	40 V	175 °C	-55 °C	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

P-Channel 40 V 120A (Tc) 136W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources