Specification	BSC050NE2LSATMA1

Current - Continuous Drain (Id) @ 25°C	58 A, 39 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.4 nC
Input Capacitance (Ciss) (Max) @ Vds	760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	28 W, 2.5 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	PG-TDSON-8-5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSC050 Series

Part	Drain to Source Voltage (Vdss)	Package / Case	Technology	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
INFINEON BSC050N04LSGATMA1	40 V	8-PowerTDFN	MOSFET (Metal Oxide)	150 °C	-55 °C	N-Channel	20 V	3700 pF	18 A 85 A	4.5 V 10 V	5 mOhm	Surface Mount	2 V	PG-TDSON-8-5	2.5 W 57 W
INFINEON BSC050N03LSGATMA1	30 V	8-PowerTDFN	MOSFET (Metal Oxide)	150 °C	-55 °C	N-Channel	20 V	2800 pF	18 A 80 A	4.5 V 10 V	5 mOhm	Surface Mount	2.2 V	PG-TDSON-8-5	2.5 W 50 W	35 nC
INFINEON BSC050N10NS5ATMA1	100 V	8-PowerTDFN	MOSFET (Metal Oxide)	175 °C	-55 °C	N-Channel	20 V	4300 pF	16 A 100 A	6 V 10 V	5 mOhm	Surface Mount	3.8 V	PG-TDSON-8-7	3 W 136 W		61 nC
INFINEON BSC050NE2LSATMA1	25 V	8-PowerTDFN	MOSFET (Metal Oxide)	150 °C	-55 °C	N-Channel	20 V		39 A 58 A	4.5 V 10 V	5 mOhm	Surface Mount	2 V	PG-TDSON-8-5	2.5 W 28 W		10.4 nC	760 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.91
		10	$ 0.57
		100	$ 0.38
		500	$ 0.29
		1000	$ 0.28
	Digi-Reel®	1	$ 0.91
		10	$ 0.57
		100	$ 0.38
		500	$ 0.29
		1000	$ 0.28
	N/A	8843	$ 0.47
	Tape & Reel (TR)	5000	$ 0.28
Newark	Each (Supplied on Cut Tape)	1	$ 0.55
		10	$ 0.48
		25	$ 0.45
		50	$ 0.41
		100	$ 0.37
		250	$ 0.35
		500	$ 0.33
		1000	$ 0.30

Description

General part information

BSC050 Series

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Documents

Technical documentation and resources

BSC050NE2LSATMA1

Deep-Dive with AI

BSC050NE2LSATMA1

Deep-Dive with AI

Technical Specifications

BSC050 Series

Pricing

Description

BSC050 Series

Documents

MOSFET OptiMOS™ and StrongIRFET™

FIT Report - BSC050NE2LS

BSC050NE2LS

BSC050NE2LS

Infineon-MA005420928-MaterialContentSheet-v01_00-EN

MOSFET linear mode operation and SOA power MOSFETs

Technical Data Sheet EN

BSC050 Series