Discrete Semiconductor Products

VS-GBPC2510W

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BRIDGE RECT 1P 1KV 25A GBPC-W

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Discrete Semiconductor Products

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BRIDGE RECT 1P 1KV 25A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GBPC2510W

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	2 mA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square, GBPC-W
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max) [Max]	1 kV

Part	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Diode Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Peak Reverse (Max) [Max]	Package / Case
Vishay General Semiconductor - Diodes Division GBPC2510W-E4/51	Standard	150 °C	-55 °C	GBPC-W	Single Phase	25 A	1.1 V	Through Hole	5 µA	1 kV	4-Square GBPC-W
Vishay General Semiconductor - Diodes Division VS-GBPC2510W	Standard	150 °C	-55 °C	GBPC-W	Single Phase	25 A	1.1 V	Through Hole	2 mA	1 kV	4-Square GBPC-W
Vishay General Semiconductor - Diodes Division GBPC2510W(UM)E4/51	Standard	150 °C	-55 °C	GBPC-W	Single Phase	25 A	1.1 V	Through Hole	5 µA	1 kV	4-Square GBPC-W
Vishay General Semiconductor - Diodes Division VS-GBPC2510A	Standard	150 °C	-55 °C	GBPC-A	Single Phase	25 A		QC Terminal	2 mA	1 kV	4-Square GBPC-A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBPC-W

Technical documentation and resources