Discrete Semiconductor Products

IQE022N06LM5ATMA1

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INFINEON

OPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 60 V 2.2 MOHM 151 A, IN A PQFN 3.3X3.3 PACKAGE

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DocumentsIQE022N06LM5ATMA1 | Datasheet

Discrete Semiconductor Products

IQE022N06LM5ATMA1

Active

INFINEON

OPTIMOS™ 5 SINGLE N-CHANNEL SOURCE-DOWN LOGIC LEVEL FET, 60 V 2.2 MOHM 151 A, IN A PQFN 3.3X3.3 PACKAGE

Deep-Dive with AI

DocumentsIQE022N06LM5ATMA1 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IQE022N06LM5ATMA1

Current - Continuous Drain (Id) @ 25°C	151 A, 24 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	4420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 100 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	PG-TSON-8-5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

IQE022N06 Series

Part	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology
INFINEON IQE022N06LM5ATMA1	PG-TSON-8-5	N-Channel	4.5 V 10 V	175 °C	-55 °C	4420 pF	Surface Mount	20 V	2.5 W 100 W	2.3 V	53 nC	2.2 mOhm	60 V	24 A 151 A	8-PowerTDFN	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4173	$ 2.46
Mouser	N/A	1	$ 2.31
		10	$ 1.75
		100	$ 1.37
		500	$ 1.16
		1000	$ 1.05
		5000	$ 1.04
Newark	Each (Supplied on Cut Tape)	1	$ 2.79
		10	$ 2.02
		25	$ 1.85
		50	$ 1.67
		100	$ 1.51
		250	$ 1.37
		500	$ 1.23
		1000	$ 1.09

Description

General part information

IQE022N06 Series

IQE022N06LM5 is Infineon’s new best-in-classOptiMOS™ 5power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry’s lowest on-state resistance RDS(on)at 25˚C and superior thermal performance. TheOptiMOS™ Source-Downis a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with industrial standard PQFN 3.3x3.3 package, IQE022N06LM5 is targeted for high power density and performanceSMPSproducts commonly found intelecomand data servers.

Documents

Technical documentation and resources

IQE022N06LM5ATMA1 | Datasheet

Datasheet