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MSH100P50
Discrete Semiconductor Products

MSH100P50

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Bruckewell

P CHANNEL MOSFET,100V,DFN5X6

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MSH100P50
Discrete Semiconductor Products

MSH100P50

Active
Bruckewell

P CHANNEL MOSFET,100V,DFN5X6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMSH100P50
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device PackageDFN5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3$ 0.83

Description

General part information

MSH100P50

P CHANNEL MOSFET,100V,DFN5X6

Documents

Technical documentation and resources