Specification	SSM5H90ATU,LF

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.2 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	5-SMD, Flat Leads
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	UFV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.2 V

SSM5H90ATU Series

Bipolar Transistors, 20 V/2.4 A N-ch MOS + SW-DI, SOT-353F(UFV)

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology
Toshiba Semiconductor and Storage SSM5H90ATU,LF	UFV	65 mOhm	200 pF	500 mW	150 °C	4 V	2.5 V	Surface Mount	2.4 A	1.2 V	20 V	10 V	N-Channel	2.2 nC	5-SMD Flat Leads	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	573	$ 0.50

General part information

Bipolar Transistors, 20 V/2.4 A N-ch MOS + SW-DI, SOT-353F(UFV)

Technical documentation and resources