Discrete Semiconductor Products

PJD18N20_L2_00001

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MOSFETS 200V N-CHANNEL ENHANCEMENT MODE MOSFET

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Discrete Semiconductor Products

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MOSFETS 200V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD18N20_L2_00001

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1017 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Power Dissipation (Max)	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)
Panjit International Inc. PJD18N20_L2_00001	DPAK (2 Leads + Tab) SC-63 TO-252-3	83 W	MOSFET (Metal Oxide)	N-Channel	1017 pF	24 nC	3 V	10 V	150 °C	-55 °C	18 A	200 V	Surface Mount	TO-252AA	160 mOhm	20 V

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MOSFETS 200V N-CHANNEL ENHANCEMENT MODE MOSFET

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