Specification	PBSS5160T-QR

Current - Collector (Ic) (Max) [Max]	900 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	270 mW
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	330 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

PBSS5160T-Q Series

60 V, 1 A PNP low VCEsat transistor

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Mounting Type	Package / Case	Transistor Type	Supplier Device Package	Operating Temperature
Nexperia USA Inc. PBSS5160T-QR	900 mA	100 nA	200	60 V	330 mV	270 mW	Surface Mount	SC-59 SOT-23-3 TO-236-3	PNP	TO-236AB	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2289	$ 0.38

General part information

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources