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DF8MR12W1M1HFB67BPSA1

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THE DF8MR12W1M1HF_B67 IS A 1200 V COOLSIC™ MOSFET MODULE

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Discrete Semiconductor Products

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THE DF8MR12W1M1HF_B67 IS A 1200 V COOLSIC™ MOSFET MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	DF8MR12W1M1HFB67BPSA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs [Max]	149 nC
Input Capacitance (Ciss) (Max) @ Vds	4400 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	16.2 mOhm
Supplier Device Package	AG-EASY1B
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
INFINEON DF8MR12W1M1HFB67BPSA1	Module	16.2 mOhm	149 nC	45 A	2 N-Channel (Dual)	5.15 V	175 °C	-40 °C	1.2 kV	1200 V	Silicon Carbide (SiC)	AG-EASY1B	4400 pF	Chassis Mount

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General part information

EasyPACK™ 1B1200 V, 16 mΩ and 2 MPPTs booster module withCoolSiC™ MOSFETenhanced generation 1 andPressFIT Contact Technology.

Technical documentation and resources