Discrete Semiconductor Products

IKW30N65NL5XKSA1

Obsolete

TRANS IGBT CHIP N-CH 650V 85A 227W 3-PIN(3+TAB) TO-247 TUBE

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Discrete Semiconductor Products

Obsolete

TRANS IGBT CHIP N-CH 650V 85A 227W 3-PIN(3+TAB) TO-247 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IKW30N65NL5XKSA1

Current - Collector (Ic) (Max) [Max]	85 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	168 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	227 W
Reverse Recovery Time (trr)	59 ns
Supplier Device Package	PG-TO247-3
Switching Energy	560 µJ, 1.35 mJ
Td (on/off) @ 25°C	283 ns, 59 ns
Test Condition	30 A, 15 V, 400 V, 23 Ohm
Vce(on) (Max) @ Vge, Ic	1.35 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Test Condition	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Mounting Type	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Package / Case	Switching Energy	Supplier Device Package	Power - Max [Max]
INFINEON IKW30N65NL5XKSA1	59 ns	85 A	15 V 23 Ohm 30 A 400 V	59 ns 283 ns	1.35 V	Through Hole	168 nC	175 °C	-40 °C	650 V	120 A	TO-247-3	1.35 mJ 560 µJ	PG-TO247-3	227 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT 650 V 85 A 227 W Through Hole PG-TO247-3

Technical documentation and resources