Discrete Semiconductor Products
PBSS306NX,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 100 V, 4.5 A NPN LOW VCESAT TRANSISTOR
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Discrete Semiconductor Products
PBSS306NX,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 100 V, 4.5 A NPN LOW VCESAT TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS306NX,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 4.5 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 110 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Power - Max [Max] | 2.1 W |
| Qualification | AEC-Q100 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 245 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS306NX Series
NPN low VCEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources