Discrete Semiconductor Products

SI7621DN-T1-GE3

Obsolete

MOSFET P-CH 20V 4A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7621DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	6.2 nC
Input Capacitance (Ciss) (Max)	300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	3.1 W, 12.5 W
Rds On (Max)	90 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	2 V

Part	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Package Name	Package / Case	FET Type	Vgs (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SI7621DN-T1-GE3	90 mOhm	4 A	2 V	2.5 V	4.5 V	Surface Mount	3.1 W 12.5 W	-55 °C	150 °C	MOSFET (Metal Oxide)	PowerPAK® 1212-8	PowerPAK® 1212-8	P-Channel	12 V	6.2 nC	300 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 4A (Tc) 3.1W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources