Technical Specifications
Parameters and characteristics for this part
| Specification | BSC123N08NS3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A, 55 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.5 W |
| Power Dissipation (Max) | 66 W |
| Rds On (Max) @ Id, Vgs | 12.3 mOhm |
| Supplier Device Package | PG-TDSON-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSC123 Series
The BSC123N08NS3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
Documents
Technical documentation and resources
