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PG-TDSON-8-1
Discrete Semiconductor Products

BSC123N08NS3GATMA1

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INFINEON

POWER MOSFET, N CHANNEL, 80 V, 55 A, 0.0103 OHM, PG-TSDSON, SURFACE MOUNT

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PG-TDSON-8-1
Discrete Semiconductor Products

BSC123N08NS3GATMA1

Active
INFINEON

POWER MOSFET, N CHANNEL, 80 V, 55 A, 0.0103 OHM, PG-TSDSON, SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC123N08NS3GATMA1
Current - Continuous Drain (Id) @ 25°C11 A, 55 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC
Input Capacitance (Ciss) (Max) @ Vds1870 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W
Power Dissipation (Max)66 W
Rds On (Max) @ Id, Vgs12.3 mOhm
Supplier Device PackagePG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.06
10$ 1.32
100$ 0.89
500$ 0.71
1000$ 0.65
2000$ 0.60
Digi-Reel® 1$ 2.06
10$ 1.32
100$ 0.89
500$ 0.71
1000$ 0.65
2000$ 0.60
N/A 51055$ 1.38
Tape & Reel (TR) 5000$ 0.57
NewarkEach 1$ 1.64
10$ 1.05
100$ 0.83
500$ 0.67
1000$ 0.56
2500$ 0.56
10000$ 0.52

Description

General part information

BSC123 Series

The BSC123N08NS3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.

Documents

Technical documentation and resources