Discrete Semiconductor Products

IPW65R150CFDFKSA2

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MOSFET N-CH 650V 22.4A TO247-3

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Discrete Semiconductor Products

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MOSFET N-CH 650V 22.4A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R150CFDFKSA2

Current - Continuous Drain (Id) @ 25°C	22.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	86 nC
Input Capacitance (Ciss) (Max) @ Vds	2340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	195.3 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	PG-TO247-3-41
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON IPW65R150CFDFKSA1	195.3 W	86 nC	Through Hole	22.4 A	20 V	150 mOhm	MOSFET (Metal Oxide)	10 V	2340 pF	TO-247-3	N-Channel	650 V	PG-TO247-3	4.5 V	150 °C	-55 °C
INFINEON IPW65R150CFDFKSA2	195.3 W	86 nC	Through Hole	22.4 A	20 V	150 mOhm	MOSFET (Metal Oxide)	10 V	2340 pF	TO-247-3	N-Channel	650 V	PG-TO247-3-41	4.5 V	150 °C	-55 °C

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General part information

N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO247-3-41

Technical documentation and resources