Discrete Semiconductor Products

SPW15N60C3FKSA1

Obsolete

MOSFET N-CH 650V 15A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 15A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPW15N60C3FKSA1

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC
Input Capacitance (Ciss) (Max) @ Vds	1660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Mounting Type	Power Dissipation (Max)	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs
INFINEON SPW15N60C3FKSA1	Through Hole	156 W	N-Channel	PG-TO247-3-1	280 mOhm	MOSFET (Metal Oxide)	1660 pF	10 V	15 A	650 V	TO-247-3	3.9 V	20 V	150 °C	-55 °C	63 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 15A (Tc) 156W (Tc) Through Hole PG-TO247-3-1

Technical documentation and resources

No documents available