Discrete Semiconductor Products

SI8404DB-T1-E1

Obsolete

MOSFET N-CH 8V 12.2A 4MICROFOOT

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 8V 12.2A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8404DB-T1-E1

Current - Continuous Drain (Id) (Tc)	12.2 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	33 nC
Input Capacitance (Ciss) (Max)	1950 pF, 1950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	6.25 W, 2.78 W
Rds On (Max)	31 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	1 V

Part	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	FET Type	Package Name	Package / Case	Current - Continuous Drain (Id) (Tc)	Technology	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Mounting Type
Vishay Dale SI8404DB-T1-E1	31 mOhm	1950 pF 1950 pF	5 V	33 nC	-55 °C	150 °C	8 V	N-Channel	4-Microfoot	4-XFBGA CSPBGA	12.2 A	MOSFET (Metal Oxide)	2.78 W 6.25 W	4.5 V	1.8 V	1 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.38	1m+

3D models and CAD resources for this part

General part information

N-Channel 8 V 12.2A (Tc) 2.78W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources

No documents available