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8-Power TDFN
Discrete Semiconductor Products

BSC084P03NS3EGATMA1

Obsolete
INFINEON

OPTIMOS™ POWER MOSFET -30 V ; SUPERSO8 5X6 PACKAGE; 8.4 MOHM;

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8-Power TDFN
Discrete Semiconductor Products

BSC084P03NS3EGATMA1

Obsolete
INFINEON

OPTIMOS™ POWER MOSFET -30 V ; SUPERSO8 5X6 PACKAGE; 8.4 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC084P03NS3EGATMA1
Current - Continuous Drain (Id) @ 25°C14.9 A, 78.6 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]57.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4240 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)69 W, 2.5 W
Rds On (Max) @ Id, Vgs8.4 mOhm
Supplier Device PackagePG-TDSON-8-5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
8731$ 0.00

Description

General part information

BSC084 Series

These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Documents

Technical documentation and resources