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STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

IPB60R120P7ATMA1

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INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 120 MOHM;

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Search across all available documentation for this part.

STMICROELECTRONICS L4941BDT-TR
Discrete Semiconductor Products

IPB60R120P7ATMA1

Active
INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 120 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB60R120P7ATMA1
Current - Continuous Drain (Id) @ 25°C26 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC
Input Capacitance (Ciss) (Max) @ Vds1544 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)95 W
Rds On (Max) @ Id, Vgs120 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.99
10$ 2.62
100$ 1.85
500$ 1.51
Digi-Reel® 1$ 3.99
10$ 2.62
100$ 1.85
500$ 1.51
N/A 1319$ 3.14
Tape & Reel (TR) 1000$ 1.41
2000$ 1.39
NewarkEach (Supplied on Cut Tape) 1$ 2.87
10$ 2.25
25$ 2.11
50$ 1.97
100$ 1.83
250$ 1.67
500$ 1.51
1000$ 1.37

Description

General part information

IPB60R120 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources