Technical Specifications
Parameters and characteristics for this part
| Specification | IGB30N60H3ATMA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 165 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 187 W |
| Supplier Device Package | PG-TO263-3-2 |
| Switching Energy | 1.17 mJ |
| Td (on/off) @ 25°C [custom] | 207 ns |
| Td (on/off) @ 25°C [custom] | 18 ns |
| Test Condition | 400 V, 30 A, 15 V, 10.5 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IGB30 Series
High speed 600 V, 30 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Documents
Technical documentation and resources
