Discrete Semiconductor Products

SISA34DN-T1-GE3

Obsolete

MOSFET N-CH 30V 40A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 40A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SISA34DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	1100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	20.8 W
Rds On (Max)	6.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

Part	Rds On (Max)	Input Capacitance (Ciss) (Max)	FET Type	Gate Charge (Max)	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package Name	Power Dissipation (Max)
Vishay Dale SISA34DN-T1-GE3	6.7 mOhm	1100 pF	N-Channel	12 nC	PowerPAK® 1212-8	30 V	10 V	4.5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	2.4 V	-16 V	20 V	Surface Mount	40 A	PowerPAK® 1212-8	20.8 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 40A (Tc) 20.8W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources