Zenode.ai Logo
106043-HMC457QS16G
Development Boards, Kits, Programmers

106043-HMC457QS16G

Active

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
106043-HMC457QS16G
Development Boards, Kits, Programmers

106043-HMC457QS16G

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification106043-HMC457QS16G
ContentsBoard(s)
For Use With/Related ProductsHMC457QS16G
Frequency1.9 GHz
Supplied ContentsBoard(s)
TypeAmplifier
Utilized IC / PartHMC457QS16G

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBox 1$ 490.991m+
N/A 1$ 492.381m+

Description

General part information

HMC457 Series

The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.ApplicationsCDMA & W-CDMAGSM, GPRS & EdgeBase Stations & Repeaters

Documents

Technical documentation and resources