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DF6D6M4N,LF
Circuit Protection

DF6D6M4N,LF

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Toshiba Semiconductor and Storage

TVS DIODES (ESD PROTECTION DIODES)

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DF6D6M4N,LF
Circuit Protection

DF6D6M4N,LF

Active
Toshiba Semiconductor and Storage

TVS DIODES (ESD PROTECTION DIODES)

Technical Specifications

Parameters and characteristics for this part

SpecificationDF6D6M4N,LF
ApplicationsGeneral Purpose
Bidirectional Channels2
Capacitance @ Frequency0.2 pF
Current - Peak Pulse (10/1000µs)2 A
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN
Power - Peak Pulse30 W
Power Line ProtectionFalse
Supplier Device Package6-DFN (1.25x1)
TypeZener
Voltage - Breakdown (Min) [Min]5.6 V
Voltage - Clamping (Max) @ Ipp [Max]15 V
Voltage - Reverse Standoff (Typ)5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

DF6D6M4N Series

TVS Diodes (ESD Protection Diodes)