Discrete Semiconductor Products

2N5682 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 100VCBO 100VCEO 4.0VEBO 1.0A 1.0W

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 100VCBO 100VCEO 4.0VEBO 1.0A 1.0W

Technical Specifications

Parameters and characteristics for this part

Specification	2N5682 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	1 W
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp 2N5682 TIN/LEAD	Through Hole	10 µA	TO-205AD TO-39-3 Metal Can	1 W	2 V	TO-39	200 °C	-65 °C	NPN	40	30 MHz	1 A	120 V

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General part information

BIPOLAR TRANSISTORS - BJT NPN 100VCBO 100VCEO 4.0VEBO 1.0A 1.0W

Technical documentation and resources

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