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SSM6L56FE - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)
Discrete Semiconductor Products

HN1D05FE,LF

Active
Toshiba Semiconductor and Storage

DIODES, 400 V/0.1 A SWITCHING DIODE, SOT-563(ES6)

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Search across all available documentation for this part.

DocumentsHN1D05FE Data sheet/EnglishBasics of Diodes (Power Losses and Thermal Design)+7
SSM6L56FE - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)
Discrete Semiconductor Products

HN1D05FE,LF

Active
Toshiba Semiconductor and Storage

DIODES, 400 V/0.1 A SWITCHING DIODE, SOT-563(ES6)

Deep-Dive with AI

DocumentsHN1D05FE Data sheet/EnglishBasics of Diodes (Power Losses and Thermal Design)+7

Technical Specifications

Parameters and characteristics for this part

SpecificationHN1D05FE,LF
Current - Average Rectified (Io) (per Diode)100 mA
Current - Reverse Leakage @ Vr100 nA
Diode Configuration2 Independent
Mounting TypeSurface Mount
Operating Temperature - Junction150 ¯C
Package / CaseSOT-563, SOT-666
Reverse Recovery Time (trr)500 ns
Speed200 mA
SpeedAny Speed
Supplier Device PackageES6
Supplier Device Package [x]1.6
Supplier Device Package [y]1.6
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If [Max]1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 5510$ 0.22

Description

General part information

HN1D05FE Series

Diodes, 400 V/0.1 A Switching diode, SOT-563(ES6)