Zenode.ai Logo
Beta
PG-TO252-3-11
Discrete Semiconductor Products

SPD26N06S2L-35

Obsolete
INFINEON

MOSFET N-CH 55V 30A TO252-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
PG-TO252-3-11
Discrete Semiconductor Products

SPD26N06S2L-35

Obsolete
INFINEON

MOSFET N-CH 55V 30A TO252-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSPD26N06S2L-35
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]24 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]790 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)68 W
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device PackagePG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.37

Description

General part information

SPD26N Series

N-Channel 55 V 30A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11

Documents

Technical documentation and resources