Discrete Semiconductor Products

IPS60R3K4CEAKMA1

Obsolete

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 3400 MOHM; PRICE/PERFORMANCE

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Discrete Semiconductor Products

Obsolete

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 600 V ; IPAK SL TO-251 SL PACKAGE; 3400 MOHM; PRICE/PERFORMANCE

Technical Specifications

Parameters and characteristics for this part

Specification	IPS60R3K4CEAKMA1

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	93 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Rds On (Max) @ Id, Vgs	3.4 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
INFINEON IPS60R3K4CEAKMA1	93 pF	PG-TO251-3	MOSFET (Metal Oxide)	-40 °C	150 °C	N-Channel	600 V	20 V	10 V	3.5 V	4.6 nC	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	3.4 Ohm	2.6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.21

General part information

N-Channel 600 V 2.6A (Tj) Through Hole PG-TO251-3

Technical documentation and resources