Discrete Semiconductor Products

IRF7749L1TRPBF

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POWER MOSFET, N CHANNEL, 60 V, 375 A, 0.0011 OHM, DIRECTFET L8, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 60 V, 375 A, 0.0011 OHM, DIRECTFET L8, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7749L1TRPBF

Current - Continuous Drain (Id) @ 25°C	200 A, 33 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	300 nC
Input Capacitance (Ciss) (Max) @ Vds	12320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	DirectFET™ Isometric L8
Power Dissipation (Max)	125 W, 3.3 W
Rds On (Max) @ Id, Vgs	1.5 mOhm
Supplier Device Package	DirectFET™ Isometric L8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case
INFINEON IRF7749L1TRPBF	N-Channel	4 V	300 nC	1.5 mOhm	20 V	DirectFET™ Isometric L8	Surface Mount	10 V	3.3 W 125 W	12320 pF	60 V	MOSFET (Metal Oxide)	175 °C	-55 °C	33 A 200 A	DirectFET™ Isometric L8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 33A (Ta), 200A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8