Discrete Semiconductor Products
IGW75N65H5XKSA1
ActiveINFINEON
TRANS IGBT CHIP N-CH 650V 120A 395W 3-PIN(3+TAB) TO-247 TUBE
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Discrete Semiconductor Products
IGW75N65H5XKSA1
ActiveINFINEON
TRANS IGBT CHIP N-CH 650V 120A 395W 3-PIN(3+TAB) TO-247 TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IGW75N65H5XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 120 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Gate Charge | 160 nC |
| IGBT Type | Trench |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 395 W |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 950 µJ, 2.25 mJ |
| Td (on/off) @ 25°C [custom] | 174 ns |
| Td (on/off) @ 25°C [custom] | 28 ns |
| Test Condition | 75 A, 8 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IGW75N65 Series
Infineon’s new TRENCHSTOP™5 IGBT technology redefines "Best-in-class" IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Documents
Technical documentation and resources