Discrete Semiconductor Products

2N5209 TIN/LEAD

Obsolete

BIPOLAR TRANSISTORS - BJT NPN 50VCEO 50VCBO 4.5VEBO 50MA 350MW

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Discrete Semiconductor Products

Obsolete

BIPOLAR TRANSISTORS - BJT NPN 50VCEO 50VCBO 4.5VEBO 50MA 350MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N5209 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	0.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Mounting Type	Package / Case	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Central Semiconductor Corp 2N5209 TIN/LEAD	1 W	50 nA	150	50 mA	30 MHz	Through Hole	TO-226AA	TO-226-3 TO-92-3	150 °C	-65 °C	TO-92-3	NPN	50 V	0.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
Mouser	N/A	2500	$ 0.30
		5000	$ 0.28

General part information

BIPOLAR TRANSISTORS - BJT NPN 50VCEO 50VCBO 4.5VEBO 50MA 350MW

Technical documentation and resources

No documents available