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PBSS3540M,315
Discrete Semiconductor Products

PBSS3540M,315

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Nexperia USA Inc.

40 V, 0.5 A PNP LOW VCESAT (BISS) TRANSISTOR

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PBSS3540M,315
Discrete Semiconductor Products

PBSS3540M,315

Active
Nexperia USA Inc.

40 V, 0.5 A PNP LOW VCESAT (BISS) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS3540M,315
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150
Frequency - Transition300 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-883, SC-101
Power - Max [Max]430 mW
QualificationAEC-Q100
Supplier Device PackageSOT-883
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 59256$ 0.40

Description

General part information

PBSS3540M Series

Low VCEsatPNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2540M.