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SOT8063-1
Integrated Circuits (ICs)

NGD4300DD-Q100J

Active
Nexperia USA Inc.

4 A PEAK HIGH-PERFORMANCE DUAL MOSFET GATE DRIVER

SOT8063-1
Integrated Circuits (ICs)

NGD4300DD-Q100J

Active
Nexperia USA Inc.

4 A PEAK HIGH-PERFORMANCE DUAL MOSFET GATE DRIVER

Technical Specifications

Parameters and characteristics for this part

SpecificationNGD4300DD-Q100J
Channel TypeIndependent
Current - Peak Output (Source, Sink)5 A, 4 A
Driven ConfigurationHalf-Bridge
Gate TypeMOSFET (N-Channel)
GradeAutomotive
High Side Voltage - Max (Bootstrap) [Max]120 V
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / CaseExposed Pad, 8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
QualificationAEC-Q100
Rise / Fall Time (Typ) [custom]3.5 ns
Rise / Fall Time (Typ) [custom]4 ns
Supplier Device Package8-HSO
Voltage - Supply [Max]17 V
Voltage - Supply [Min]8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2638$ 1.78

Description

General part information

NGD4300DD-Q100 Series

The NGD4300-Q100 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300-Q100 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.