Discrete Semiconductor Products

SIHP8N50D-E3

LTB

MOSFET N-CH 500V 8.7A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 8.7A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP8N50D-E3

Current - Continuous Drain (Id) (Tc)	8.7 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	527 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	156 W
Rds On (Max)	850 mOhm, 850 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Power Dissipation (Max)	Package Name	Package / Case	Rds On (Max)	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology
Vishay Dale SIHP8N50D-E3	30 V	-55 °C	150 °C	8.7 A	Through Hole	156 W	TO-220AB	TO-220-3	850 mOhm 850 mOhm	N-Channel	500 V	30 nC	5 V	527 pF	10 V	MOSFET (Metal Oxide)
Vishay Dale SIHP8N50D-GE3	30 V	-55 °C	150 °C	8.7 A	Through Hole	156 W	TO-220AB	TO-220-3	850 mOhm 850 mOhm	N-Channel	500 V	30 nC	5 V	527 pF	10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 500 V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB

Technical documentation and resources